With the three-dimensional architecture of FinFET devices, new simulation approaches are being used to model thermal behavior of the die in order to see localized temperature variations. Chip designs ...

Research path 'born out of necessity' leads Peking University scientists to develop faster, more efficient transistor A team ...

We discuss new device structures: SOI and FinFET which replaced planner bulk transistor. Here, we first discuss the basic structure, operation and important terms related to the core unit of CMOS i.e.

In this post, we’ll talk about how these changes influence integrated circuit layout. The Emergence of FinFET Technology With each generation of integrated circuit technology, custom physical layout ...

NXP Semiconductors (NASDAQ: NXPI) has unveiled its S32K5 series of automotive microcontrollers, the first to feature 16nm ...

In a FinFET-based cell, this can mean building two pairs of the devices with two fins each and the remaining two transistors with one fin each. Nanosheet devices provide “more flexibility on the ...

However, finFETs will soon approach its limits, prompting the need for a new technology at the 3nm and/or 2nm process nodes. (A node refers to a technology generation’s performance specifications, ...

A type of 3D FinFET transistor from Intel introduced in 2011 with its Ivy Bridge microarchitecture. The Tri-Gate design is considered 3D because the gate wraps around a raised source-to-drain ...

NXP Semiconductors has unveiled the S32K5 family of automotive microcontrollers (MCUs), featuring 16nm FinFET technology with embedded magnetic RAM (MRAM). The S32K5 MCU family extends the NXP ...

VIJAYAWADA: The world can witness the arrival of a groundbreaking, gate-all-around nanosheet transistor technology, poised to ...

S32K5 MCU enables fast, scalable zonal SDVs with AI and networking, fully integrated into the NXP CoreRide platform.