In our last post, we looked at the basics of finFET technology and how its increased complexity ... The metal layers at the bottom of the stack, closest to the devices, must be on-pitch or very close ...

In a finFET, the channel consists of two or more fins, surrounded on three sides by the gate. Reducing the spacing between fins allows the contact pitch to shrink, while increasing the fin height ...

FinFETs form the foundation for many of today’s semiconductor fabrication techniques but also create significant design concerns that affect your layout. Understanding the changes and design ...