The Sofics 1.8V capable GPIO is an IP macro for on-chip integration. It is a 1.8V general purpose I/O built with a stack of 1.2V MOS FINFET devices. It is controlled by 0.75V (core) signals. ... The ...

Thermal characteristics for the 16nm FinFET node are much more complex to model due to the fin dimension of the device. For the planar CMOS process, the heat generated is usually dissipated through ...

This issue can be solved using a gate-last (or RMG) integration approach, which, however, comes with additional process steps. At IEDM in 2022, imec showed a thermally stable version of a FinFET ...

SoC design teams can use the silicon-proven, project-ready solution to implement FinFET-based designs, and together with the reference flow, early adopters of the TSMC 16-nm process will realize the ...

But between strained silicon and the FinFET came Intel’s riskiest ... of this so-called gate first process. “The way out was we had to reverse the flow and do the gate at the end,” explains ...

Fig. 1: Transition from finFET to GAA drives critical isotropic selective etch requirements. Source: Lam Research Used for several decades, etch is an essential process in the fab. In a simple process ...

Much of the confusion comes from the switch to the FinFET process. While older planar transistors could be thought of as largely 2d structures, FinFET’s are three dimensional. This means that ...