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Intel, Synopsys, TSMC All Unveil Record Memory DensitiesThe scheme also frees up space for signal interconnects. With FinFET devices, an SRAM’s pass gate (PG) and pull down (PD) ...
This paper presents a Seven-transistor SRAM cell intended for the advanced microprocessor ... This causes overstress on the gate oxide of the cell nMOS transistor and deteriorates device reliability, ...
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