Wolfspeed specifically designed its latest generation of SiC MOSFETs to be a better fit for both hard- and soft-switching ...

APC-E’s initial product launch includes 650V SiC Schottky barrier diodes (SBDs) with low forward voltage to enhance energy savings in power supplies across a wide range of applications. Also included ...

Wolfspeed introduced its Gen 4 SiC MOSFET platform, supporting long-term roadmaps for high-power, application-optimized ...

Based on a new manufacturing process, the split-gate MOSFETs developed by Renesas show significant improvements in power ...

Navitas Semiconductor, a developer of next-generation GaNFast gallium nitride (GaN) and GeneSiC silicon carbide (SiC) power ...

The team has just determined that its approach – involving plasma nitridation of the SiC surface, sputter deposition of SiO 2, and post-deposition annealing – reduces the interface state density near ...

TDK Corporation has expanded its CGA series for automotive applications and C series for commercial multilayer ceramic ...

Infineon has added five isolated gate drivers to its EiceDriver family optimized for driving IGBTs and SiC MOSFETs.

Both power MOSFETs and IGBTs are mature and inexpensive, but they are also reaching their theoretical limits. That’s where SiC and gallium nitride (GaN) fit in. Both GaN and SiC are wide-bandgap ...

"Our SiC MOSFETs and Schottky Barrier Diodes are being exported to over six countries, showcasing our commitment to delivering high-performance solutions globally," said Prithvideep Singh ...

Navitas’ GaNFast power ICs enable high-frequency, high-efficiency power conversion, achieving 3x more power and 3x faster charging in half the size and weight compared to prior designs with legacy ...