One implementation of the two materials in RF power amplifiers is as a stack, known as GaN-on-SiC, which was intended to give ...

Littelfuse’s IXD2012NTR high-side and low-side gate driver drives two N-channel MOSFETs or IGBTs in a half-bridge ...

Littelfuse has released the IXD2012NTR, a high-speed, high-side and low-side gate driver designed to drive two N-channel MOSFETs or IGBTs in a half-bridge configuration. The IXD2012NTR has been ...

Littelfuse, has released the IXD2012NTR, a high-speed, high-side and low-side gate driver designed to drive two N-channel MOSFETs or IGBTs in a half-bridge configuration. The IXD2012NTR is optimised ...

Combining a buck-boost topology and Silent Switcher technology brings very low EMI at the highest power-conversion efficiency ...

The eBook Flip the Switch on Reliable Modern Energy explains how SiC will help meet the increasing power requirements by ...

For the next push, the output is disconnected. This is an attractive alternative to bulkier ON/OFF switches for DC circuits. The circuit has a fairly simple explanation. U1 is a counter. Figure 1 A ...

New gate driver delivers 1.9 A source and 2.3 A sink output, offering robust performance and improved switching efficiency ...

The best tech products announced this week include Bowers & Wilkins' next-gen headphones and some serious audiophile-grade ...

The Miller clamp circuit has a channel resistance of 0.69Ω (typ.) and a peak clamp sink current rating of 6.8A. These ...

Its libraries feature flexible general purpose I/O blocks and open-drain I/O blocks operating from 0.9 V to 5 V and special structures that handle voltages up to 20 V on low-voltage CMOS chips ... to ...

Lelantos Inc. (New York, NY) - $75,000. Lelantos is a developer of miniaturized semiconductor gas sensors based in New York, ...