SemiQ Inc. has announced its third-generation QSiC 1200V MOSFET, a silicon carbide device engineered for high-voltage ...

SemiQ Inc, a US SiC company, has announced the QSiC 1200V MOSFET, a third-generation device that shrinks die size while ...

SemiQ, a supplier of silicon carbide solutions for high performance applications, presents the new QSiC 1200V MOSFET.

The AL8866Q, an automotive-compliant LED driver from Diodes Inc., is designed to drive an external MOSFET. The DC-switching ...

SEMIQ QSiC 1200V MOSFET third-generation SiC device shrinks the die size while improving switching speeds and efficiency.

The detectors’ output voltage is then proportional to the MOSFET Drain-Source reverse voltage drop and this is applied to the Gate via the driver. This action provides a rapid turn-off as the current ...

“Compared to SiC MOSFETs with an SiO 2 insulator, our HfO 2-gated MOSFET has a factor of five increase in permittivity ... followed by a 0.5 µm-thick p-body and a 0.25 µm-thick source layer. Etching ...

Wolfspeed introduced its Gen 4 SiC MOSFET platform, supporting long-term roadmaps for high-power, application-optimized ...

Unlock the hidden potential of an old laptop battery and discover how to extract valuable MosFet components for your next ...

Based on a new manufacturing process, the split-gate MOSFETs developed by Renesas show significant improvements in power ...