SemiQ Inc has announced a family of co-packaged 1200 V SOT-227 MOSFET modules based on its third-generation SiC technology.

This determines how much energy the MOSFET can withstand under avalanche conditions. Avalanche occurs if the maximum drain-to-source voltage is exceeded and current rushes through the device.

SemiQ has announced a family of co-packaged 1200 V SOT-227 MOSFET modules based on its third-generation SiC technology.

Today, SiC accounts for the majority of the revenue generated by compound semiconductor power electronics, and sales are ...

The devil in the defects Unfortunately, unlocking the promise of SiC demands addressing a number of key challenges. A major one is an imperfect interface between SiC and SiO 2 that prevents SiC ...

Operating at a drain-to-source voltage (VDS) of 1200V, these SiC MOSFET modules minimize total switching losses down to 468 µJ and feature a reverse recovery charge as low as 172 nC, as demonstrated ...

This video explores a crucial parameter in power MOSFETs: Rds(on), the resistance between drain and source when the device is conducting ... and temperature reveal the superior efficiency of the SiC ...

This MOSFET is composed mainly of an n-channel diamond semiconductor layer atop another diamond layer doped with a high concentration of phosphorus (middle diagram in the figure). The use of the ...

Peter Hunszinger is the director of CCUS project delivery at Worley.

And seeing HUD headquarters topple down would gratify everyone who wants to drain the D.C. swamp and everyone whose home value or neighborhood was blighted by HUD.

This small amount of power draw doesn't significantly drain the stored energy in the battery, leaving plenty for you to start the car. Tesla's electric vehicles (EVs) have the same always-on features.