It is developed with TSMC 16 nm 0.8 V/1.8 V CMOS LOGIC FinFET Compact Process. Different combinations ... IGMTLSV04A is a synchronous LVT / ULVT periphery high-density ternary content addressable ...

It is developed with TSMC 16 nm 0.8 V/1.8 V CMOS LOGIC FinFET Compact Process. Different combinations ... IGMDLRX01A is an asynchronous read and synchronous write ULVT periphery two port register file ...

Like all foundries, it assumes the costs and capital expenditures of running factories amid a highly cyclical market for its customers. Foundries tend to add excessive capacity during times of ...

TSMC Intel detailed two versions of the memory circuit, a high-density and a high-current version, and the latter took even more advantage of nanosheet flexibility. In FinFET designs, the pass ...

For its latest PC chips, Intel turned to TSMC instead of using the Intel 20A ... replacing the previous FinFET architecture that was introduced in 2011. The move to RibbonFET will improve ...

Intel 18A should propel Intel close to TSMC in terms of performance and efficiency ... replacing the previous FinFET architecture that was introduced in 2011. The move to RibbonFET will improve ...

TSMC's 2nm process kicks off its use of Gate-all-around transistors (GAA) replacing FinFET. Using horizontal nanosheets stacked vertically, these transistors allow the gate to come into contact with ...

Fabricated in TSMC's 4nm FinFET process, the 55mm2 core complex (CCX), shown in Fig. 2.1.1., contains 8.6B transistors across eight cores, each with a 1MB private L2 cache and a shared 32MB L3 cache.