EDN2d
A new platform for thermally stable DRAM peripheral transistors
Until 2018, DRAM peripheral transistors were predominantly made in planar logic MOSFET technology with poly-Si/SiO 2 or ...
AZoNano3d
CEA and Quobly Report Simultaneous, Microsecond Qubit-Readout Solution With 10x Power-Use Reduction
Irig, reported today it has developed a unique solution using FD-SOI CMOS technology that provides simultaneous microsecond ...
Planet F116d
F1 quiz: Can you name the 2025 F1 circuits by their layouts?
Test your knowledge of F1 circuit layouts by correctly identifying each of the 2025 tracks solely based on a diagram of the circuit. While we can all remember the names and countries of the F1 ...
Design-Reuse19d
Latch-up Improvement For Tap Less Library Through Modified Decoupling Capacitors Cells
The spacing between these ‘Well Taps’ should not be too high as this would increase the resistance R1 and R2 and this could make the circuit susceptible to latch-up. Refer figure 3 for a typical CMOS ...
Design-Reuse19d
Asynchronous Logic: large CMOS devices without a clock tree
CMOS is, and will continue to be ... One major reason for this is that the entire device is normally designed as a single synchronous circuit. By using asynchronous logic many of these problems can be ...
IEEE25d
An Automated Circuit Topology Generation and Optimization Method for CMOS Low-Noise Amplifiers
is applied to optimize the performances of generated circuit topologies. To validate, four typical examples of X-band LNA based on a 130-nm CMOS process are presented, and the results are verified ...
IEEE29d
A Low Noise 8.3-Mpixel CMOS Image Sensor With Selectable Multiple Sampling Technique by 5.36 GHz Global Counter and Dual Latch Skew Canceler
Abstract: This document presents a CMOS image sensor (CIS) with a high-speed single slope ... The counter was confirmed to operate at a frequency equivalent to 5.36GHz. It uses a circuit and dedicated ...