SemiQ has announced a family of co-packaged 1200 V SOT-227 MOSFET modules based on its third-generation SiC technology.

This determines how much energy the MOSFET can withstand under avalanche conditions. Avalanche occurs if the maximum drain-to-source voltage is exceeded and current rushes through the device.

The devil in the defects Unfortunately, unlocking the promise of SiC demands addressing a number of key challenges. A major one is an imperfect interface between SiC and SiO 2 that prevents SiC ...

Operating at a drain-to-source voltage (VDS) of 1200V, these SiC MOSFET modules minimize total switching losses down to 468 µJ and feature a reverse recovery charge as low as 172 nC, as demonstrated ...

This small amount of power draw doesn't significantly drain the stored energy in the battery, leaving plenty for you to start the car. Tesla's electric vehicles (EVs) have the same always-on features.

“It’s going to become, and it’s already becoming, a brain drain,” Jones says. “It’s the kind of thing you don’t see immediately. This takes time to manifest itself — sometimes ...

Bathroom drains, kitchen drains, in fact, every drain in your home can become blocked at some point, and it's a real nuisance to clear them. Recently, Manchester Evening News journalist Emma Gill ...

Water management for semiconductor manufacturers is complex, propagated by the extreme purity requirements for the water used ...

Littelfuse, has released the IXD2012NTR, a high-speed, high-side and low-side gate driver designed to drive two N-channel MOSFETs or IGBTs in a half-bridge configuration. The IXD2012NTR is optimised ...

Persistent Link: https://ieeexplore.ieee.org/servlet/opac?punumber=55 ...