A new STI (Shallow Trench Isolation) corner rounding technique with MSTS (Micro-Structure Transformation of Silicon) which utilizes Si-migration phenomenon with hydrogen ambient …

In this work, a novel method for shallow trench isolation (STI) top corner rounding (TCR) is presented. Different from conventional methods, such as liner oxida.

Sep 7, 2022 · A highly repeatable dry etch corner rounding solution for 0.11 μ m shallow trench isolation (STI) without increasing additional process steps was proposed.

Abstract: To obtain a top corner rounding in the Shallow Trench Isolation (STI) process with a hard mask, a new etching spacer and Si soft etching for an useful top corner process is …

[0012] The present invention provides a method for performing shallow trench isolation that improves STI corner rounding in a semiconductor device. After etching shallow trenches into a …

A new STI top corner rounding method using Si soft etching by O2+CF4 plasma following pad oxide shift using dilute HF solution was investigated. In this paper, its effectiveness was …

Nov 10, 2004 · Shallow Trench Isolation (STI) technology is important for realizing high-speed and high-packing-density complementary metal oxide semiconductor very large scale …

In this study, different pad oxide PB was achieved by hydrogen fluoride (HF) etching and correlated with corner rounding. For high pad oxide PB, additional hydrogen peroxide (H2O2) …

The present invention concerns the fabrication of integrated circuits and pertains particularly to trench-diffusion corner rounding in a shallow-trench (STI) process.

This prevents silicon lattice stress and electric field concentration in the upper portion of the trench, thereby improving the reliability of the semiconductor device.